The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Mar. 10, 2004
Yoshinobu Suehiro, Aichi-ken, JP;
Mitsuhiro Inoue, Aichi-ken, JP;
Hideaki Kato, Aichi-ken, JP;
Kunihiro Hadame, Aichi-ken, JP;
Ryoichi Tohmon, Aichi-ken, JP;
Satoshi Wada, Aichi-ken, JP;
Koichi Ota, Aichi-ken, JP;
Kazuya Aida, Saitama-ken, JP;
Hiroki Watanabe, Saitama-ken, JP;
Yoshinori Yamamoto, Saitama-ken, JP;
Masaaki Ohtsuka, Saitama-ken, JP;
Naruhito Sawanobori, Saitama-ken, JP;
Yoshinobu Suehiro, Aichi-ken, JP;
Mitsuhiro Inoue, Aichi-ken, JP;
Hideaki Kato, Aichi-ken, JP;
Kunihiro Hadame, Aichi-ken, JP;
Ryoichi Tohmon, Aichi-ken, JP;
Satoshi Wada, Aichi-ken, JP;
Koichi Ota, Aichi-ken, JP;
Kazuya Aida, Saitama-ken, JP;
Hiroki Watanabe, Saitama-ken, JP;
Yoshinori Yamamoto, Saitama-ken, JP;
Masaaki Ohtsuka, Saitama-ken, JP;
Naruhito Sawanobori, Saitama-ken, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-gun, Aichi-ken, JP;
Sumita Optical Glass Inc., Saitama-shi, Saitama-ken, JP;
Abstract
A method for manufacturing a solid element device, which comprises providing a glass-containing AlOsubstrate () having a GaN based LED element () placed thereon, setting a PO—ZnO based low melting point glass in parallel with the substrate, and carrying out a press working at a temperature of 415° C. or higher under a pressure of 60 kgf in a nitrogen atmosphere. Under these conditions, the low melting point glass has a viscosity of 10poise, and is adhered via an oxide formed on the surface of the glass-containing AlOsubstrate (). A solid element device manufactured by the above method can be manufactured through a glass sealing working at a low temperature and also has a highly reliable sealing structure.