The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Oct. 21, 2008
Masato Aoki, Aichi-ken, JP;
Miki Moriyama, Aichi-ken, JP;
Masato Aoki, Aichi-ken, JP;
Miki Moriyama, Aichi-ken, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-gun, Aichi-ken, JP;
Abstract
An object of the present invention is to remove micro-scratches on a surface of a GaN substrate cut from a GaN ingot. The invention is directed to establish a method for surface treatment of a GaN substrate, including heating the surface in an atmosphere containing trimethylgallium, ammonia, and hydrogen. It is preferable that the trimethylgallium feeding rate is 150 μmol/min or higher, the ratio of trimethylgallium feeding rate to ammonia feeding rate (V/III ratio) is 1,200 to 4,000, and the heating temperature is 1,000° C. to 1,250° C. In addition, the temperature of the surface treatment is set to be higher than that of the following GaN growth, and the feed rate of trimethylgallium is lower than that of the growth procedure. RMS of roughness on the substrate was equal to or less than 1.3 nm, and the substrate whose step condition is excellent can be obtained.