The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2010

Filed:

Aug. 01, 2006
Applicants:

Tsuyoshi Nishiwaki, Nisshin, JP;

Hideki Tojima, Numazu, JP;

Inventors:

Tsuyoshi Nishiwaki, Nisshin, JP;

Hideki Tojima, Numazu, JP;

Assignee:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); G03F 7/20 (2006.01); G21K 5/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention presents a stencil mask in which various surface patterns can be formed, and in which deformation is suppressed when charged particles are introduced. A stencil mask of the present invention is provided with a semiconductor stack. A first penetrating hole corresponding to an ion introducing area is formed in a first semiconductor layer of the semiconductor stack, and second penetrating holes are formed in a second semiconductor layer, these second penetrating holes having a width greater than the width of the first penetrating hole. The first penetrating hole and the second penetrating holes communicate and pass through the semiconductor stack. Beam members extending between adjacent second penetrating holes connect portions of the first semiconductor layer separated by the first penetrating hole.


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