The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Mar. 08, 2005
Sylvia Pas, Plano, TX (US);
Sylvia Pas, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The formation of a lithographic mask () is disclosed, where the mask () can be used in forming integrated circuits onto a semiconductor substrate. A layer of etch stop material () is sandwiched between first () and second () layers of transmissive material that are substantially transparent to lithographic light. The layer of etch stop material () serves as an etch stop when a circuit pattern is etched into the second layer of transmissive material (). This allows the second layer of etch stop material () to be etched to a more precise depth thereby providing a desired phase shift and concurrently controlling critical dimension width.