The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Jul. 23, 2007
Hoon-sang Choi, Seoul, KR;
Jong-cheol Lee, Seoul, KR;
Ki-vin Im, Gyeonggi-do, KR;
Eun-ae Chung, Seoul, KR;
Sang-yeol Kang, Gyeonggi-do, KR;
Young-sun Kim, Gyeonggi-do, KR;
Kwang-hee Lee, Seoul, KR;
Hoon-sang Choi, Seoul, KR;
Jong-cheol Lee, Seoul, KR;
Ki-vin Im, Gyeonggi-do, KR;
Eun-ae Chung, Seoul, KR;
Sang-yeol Kang, Gyeonggi-do, KR;
Young-sun Kim, Gyeonggi-do, KR;
Kwang-hee Lee, Seoul, KR;
Abstract
Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.