The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Mar. 11, 2008
Applicant:
Shin Ishikawa, Kanagawa, JP;
Inventor:
Shin Ishikawa, Kanagawa, JP;
Assignee:
NEC Electronics Corporation, Kawasaki, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor laser element realizes a high COD light output in broader range of reflection factor at a facet with high reliability. A semiconductor laser element has a multi-layered reflection film formed on at least one end facet of a resonator. An optical path length of each layer of said multi-layered reflection film is determined by (2m−1)·λ/4, where λ is oscillation wavelength, and m is positive integer). A high-refractive-index layer and a low-refractive-index layer are alternately stacked starting from a first layer adjacent to said semiconductor.