The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Jul. 11, 2008
Akihisa Terano, Hachioji, JP;
Tomonobu Tsuchiya, Hachioji, JP;
Akihisa Terano, Hachioji, JP;
Tomonobu Tsuchiya, Hachioji, JP;
Opnext Japan, Inc., Kanagawa, JP;
Abstract
A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from 2 to 20 nm, and is formed of AlGaN whose Al content has a relationship of X≦Y to the first p-type clad layer doped with a p-type impurity containing at least an AlGaN (0<X≦0.2) layer, while a p-type ohmic electrode is formed at least over the second p-type clad layer in contact therewith.