The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Oct. 13, 2006
Bernard Dieny, Lans en Vercors, FR;
Anatoly Vedyaev, Moscow, RU;
Jérôme Faure-vincent, Montfavet, FR;
Patrick Warin, Coublevie, FR;
Matthieu Jamet, Voiron, FR;
Yves Samson, Grenoble, FR;
Bernard Dieny, Lans en Vercors, FR;
Anatoly Vedyaev, Moscow, RU;
Jérôme Faure-Vincent, Montfavet, FR;
Patrick Warin, Coublevie, FR;
Matthieu Jamet, Voiron, FR;
Yves Samson, Grenoble, FR;
Abstract
The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (), itself comprising: a reference magnetic layer () having magnetization in a direction that is fixed; a storage magnetic layer () having magnetization in a direction that is variable; and an intermediate layer () acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer () from the storage magnetic layer (). The potential profile of the intermediate layer () is asymmetrical across the thickness of said layer () so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile