The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Jun. 08, 2009
Applicant:
Hong-jyh LI, Austin, TX (US);
Inventor:
Hong-Jyh Li, Austin, TX (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods and systems for fabricating and testing semiconductor devices are disclosed. In one embodiment, a method of forming a material includes providing a first workpiece, forming a material on the first workpiece using a first process condition, and measuring a defect state of the material using a test that utilizes a monochromatic light source. If the defect state is below a predetermined value, the material is formed on at least one second workpiece using the first process condition.
Li, Hong-Jyh. (2010). Fabrication and test methods and systems (U.S. Patent No. 7821627). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7821627
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile