The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Nov. 08, 2006
Takayuki Ohmura, Hamamatsu, JP;
Suenori Kimura, Hamamatsu, JP;
Masuo Ito, Hamamatsu, JP;
Teruhiko Yamaguchi, Hamamatsu, JP;
Takayuki Ohmura, Hamamatsu, JP;
Suenori Kimura, Hamamatsu, JP;
Masuo Ito, Hamamatsu, JP;
Teruhiko Yamaguchi, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamats-shi, Shizuoka, JP;
Abstract
The present invention relates to a photomultiplier that realizes significant improvement of response time properties with a structure enabling mass production. The photomultiplier comprises a sealed container, and the sealed container includes a hollow body section, extending along a tube axis, and a faceplate. The faceplate has a light incidence surface and a light emission surface on which a photocathode is formed. In particular, the light emission surface is constituted by a flat region, and a curved-surface processed region that is positioned at a periphery of the flat region and that includes edges of the light emission surface. A surface shape of the peripheral region of the light emission surface of the faceplate is thus intentionally changed in order to adjust the angles of emission of photoelectrons from the photocathode positioned at the peripheral region. Thus, the spread of transit times of photoelectrons propagating from the photocathode to a first dynode is thus reduced effectively and made not to depend on the emission positions of the photoelectrons.