The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Aug. 18, 2009
Manabu Imahashi, Osaka, JP;
Manabu Imahashi, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
An electrostatic protection element relating to the present invention comprises a P-type semiconductor and an N-type first impurity layer provided in the semiconductor substrate. The first impurity layer comprises a P-type second impurity layer functioning as a gate. The second impurity layer comprises an N-type third impurity layer functioning as a cathode. Further, the first impurity layer comprises an N-type fourth impurity layer spaced apart from the second impurity layer at a distance. The fourth impurity layer comprises a P-type fifth impurity layer functioning as an anode and an N-type sixth impurity layer. Then, in the electrostatic protection element, an impurity concentration of the fourth impurity layer is higher than that of the first impurity layer, and a bottom of the fourth impurity layer is deeper than that of the second impurity layer.