The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Feb. 16, 2007
Hiroshi Osawa, Ichihara, JP;
Takashi Hodota, Ichihara, JP;
Hiroshi Osawa, Ichihara, JP;
Takashi Hodota, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A GaN-based semiconductor light-emitting deviceincludes a stacked bodyA having the component layersthat include an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer each formed of a GaN-based semiconductor, sequentially stacked and provided as an uppermost layer with a first bonding layermade of metal and a second bonding layerformed on an electroconductive substrate, adapted to have bonded to the first bonding layerthe surface thereof lying opposite the side on which the electroconductive substrateis formed, made of a metal of the same crystal structure as the first bonding layer, and allowed to exhibit an identical crystal orientation in the perpendicular direction of the bonding surface and the in-plane direction of the bonding surface.