The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Apr. 23, 2007
Shunpei Yamazaki, Tokyo, JP;
Yukie Suzuki, Kanagawa, JP;
Yasuyuki Arai, Kanagawa, JP;
Yoshitaka Moriya, Kanagawa, JP;
Kazuko Ikeda, Kanagawa, JP;
Yoshifumi Tanada, Kanagawa, JP;
Shuhei Takahashi, Aichi, JP;
Shunpei Yamazaki, Tokyo, JP;
Yukie Suzuki, Kanagawa, JP;
Yasuyuki Arai, Kanagawa, JP;
Yoshitaka Moriya, Kanagawa, JP;
Kazuko Ikeda, Kanagawa, JP;
Yoshifumi Tanada, Kanagawa, JP;
Shuhei Takahashi, Aichi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken, JP;
Abstract
The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.