The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Apr. 28, 2008
Minsoo Kang, Daejeon, KR;
Sae Hwan Son, Daejeon, KR;
Hyeon Choi, Daejeon, KR;
Jun Gi Jang, Cheongju, KR;
Sang Young Jeon, Seoul, KR;
Yeon Hwan Kim, Goyang, KR;
Seokhee Yoon, Daejeon, KR;
Young Kyu Han, Daejeon, KR;
Minsoo Kang, Daejeon, KR;
Sae Hwan Son, Daejeon, KR;
Hyeon Choi, Daejeon, KR;
Jun Gi Jang, Cheongju, KR;
Sang Young Jeon, Seoul, KR;
Yeon Hwan Kim, Goyang, KR;
Seokhee Yoon, Daejeon, KR;
Young Kyu Han, Daejeon, KR;
LG Chem, Ltd., Seoul, KR;
Abstract
An organic electronic device. The device includes a first electrode to inject or extract hole, the first electrode including a conductive layer and an n-type organic compound layer disposed on the conductive layer, a second electrode to inject or extract electron, a p-type organic compound layer disposed between the n-type organic compound layer and the second electrode. The p-type organic compound layer forms an NP junction between the n-type organic compound layer and the p-type organic compound layer. The energy difference between a lowest unoccupied molecular orbital (LUMO) energy of the n-type organic compound layer and a Fermi energy of the conductive layer is about 2 eV or less, and the energy difference between the LUMO energy of the n-type organic compound layer and a highest unoccupied molecular orbital (HOMO) energy of the p-type organic compound layer is about 1 eV or less.