The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2010

Filed:

Jan. 09, 2005
Applicants:

Alexander Finkelstein, Rehovot, IL;

Maxim Khodas, Rehovot, IL;

Arcadi Shehter, Rehovot, IL;

Inventors:

Alexander Finkelstein, Rehovot, IL;

Maxim Khodas, Rehovot, IL;

Arcadi Shehter, Rehovot, IL;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

A device and method for manipulating a direction of motion of current carriers are presented. The device comprises a structure containing a two-dimensional gas of current carriers configured to define at least one region of inhomogeneity which is characterized by a substantially varying value of at least one parameter from the following: a spin-orbit coupling constant, density of the spin carriers, and a mobility of the gas. The device may be configured and operable to perform spin manipulation of a flux of the spin carrying current carriers to provide at least one of the following types of deviation of said spin-carrying current carriers: spin dependent refraction, spin dependent reflection and spin dependent diffraction on desired deviation angles of a direction of motion of the spin-carrying current carriers being incident on said at least one region of inhomogeneity. The device may also be configured and operable to allow emission of the current carriers from a diffusive region at one side of the region of inhomogeneity to a ballistic region at the opposite side of the region of inhomogeneity to provide the current carriers propagation in multiple directions in the ballistic region with a wide angular range of these directions.


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