The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2010

Filed:

Apr. 30, 2008
Applicants:

Silviu Velicu, Darien, IL (US);

Christoph Grein, Wheaton, IL (US);

Sir B. Rafol, South Pasadena, CA (US);

Sivalingam Sivananthan, Naperville, IL (US);

Inventors:

Silviu Velicu, Darien, IL (US);

Christoph Grein, Wheaton, IL (US);

Sir B. Rafol, South Pasadena, CA (US);

Sivalingam Sivananthan, Naperville, IL (US);

Assignee:

EPIR Technologies, Inc., Bolingbrook, IL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/11 (2006.01);
U.S. Cl.
CPC ...
Abstract

A detector of incident infrared radiation has a first region with a first spectral response, and a second region with a second, different spectral response. The second absorption region is stacked on the first and may be separated therefrom by a region in which the chemical composition of the compound semiconductor is graded. Separate contacts are provided to the first and second absorption regions and a further common contact is provided so as to permit the application of either a bias voltage or a skimming voltage across the respective pn junctions. The detector may be operated such that a preselected one of the absorption regions responds to incident infrared radiation of a predetermined waveband while the other absorption region acts as a skimmer of dark current, thereby enhancing the signal to noise ratio of the detector.


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