The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Aug. 04, 2006
Applicants:
Kazutoshi Inoue, Tokyo, JP;
Naoyuki Wada, Tokyo, JP;
Inventors:
Kazutoshi Inoue, Tokyo, JP;
Naoyuki Wada, Tokyo, JP;
Assignee:
Sumco Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/68 (2006.01); H01L 21/205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for producing a silicon wafer by conveying a (100) face silicon wafer into and from a treating furnace of a single wafer heat-treating apparatus or a vapor phase growth apparatus with a conveying blade having a mounting face capable of mounting only a specified region of the wafer inclusive of a center position of its rear face for subjecting the wafer to a heat treatment or a vapor phase growth, in which <010> or <001> orientation is shifted by a predetermined angle with respect to a transverse direction of the mounting face of the conveying blade.