The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Sep. 14, 2006
Gerard J. Sullivan, Newbury Park, CA (US);
Amal Ikhlassi, Thousand Oaks, CA (US);
Joshua I. Bergman, Thousand Oaks, CA (US);
Berinder Brar, Newbury Park, CA (US);
Gabor Nagy, Thousand Oaks, CA (US);
Gerard J. Sullivan, Newbury Park, CA (US);
Amal Ikhlassi, Thousand Oaks, CA (US);
Joshua I. Bergman, Thousand Oaks, CA (US);
Berinder Brar, Newbury Park, CA (US);
Gabor Nagy, Thousand Oaks, CA (US);
Teledyne Licensing, LLC, Thousand Oaks, CA (US);
Abstract
A method for forming a low defect density heterojunction between a first and a second compound, the first and second compounds each includes a group III element combined with a group V element in the periodic table, the method includes the steps of introducing in the deposition chamber the flux of the group III element for the first compound at substantially the same time while introducing in the deposition chamber a flux of the group V element for the second compound, stopping the flux of the group III element for the first compound after a first predetermined time period, stopping the flux of the group V element for the first compound after a second predetermined time period, and introducing in the deposition chamber a flux of the group III element the group V element for the second compound.