The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2010

Filed:

Feb. 28, 2006
Applicant:

Anadi Srivastava, Austin, TX (US);

Inventor:

Anadi Srivastava, Austin, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for making a semiconductor device is provided. In accordance with the method, a semiconductor structure is provided which comprises (a) a substrate (), (b) first () and second () gate electrodes disposed over the substrate, and (c) first () and second () sets of spacer structures disposed adjacent to said first and second gate electrodes, respectively. A first layer of photoresist () is disposed over the structure such that the first set of spacer structures is exposed and the second set of spacer structures is covered. The structure is then subjected to an etch which etches the first layer of photoresist and a portion of the first and second sets of spacer structures.


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