The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Jul. 01, 2008
Applicants:
Takao Sawada, Tokyo, JP;
Tomokatsu Watanabe, Tokyo, JP;
Inventors:
Takao Sawada, Tokyo, JP;
Tomokatsu Watanabe, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a silicon carbide semiconductor device includes ion-implanting an impurity in a surface of a silicon carbide wafer, and forming a carbon protection film of a predetermined thickness over all surfaces of the silicon carbide wafer, which has been ion-implanted with the impurity, by a chemical vapor deposition method that deposits a film by pyrolyzing a hydrocarbon gas. The method also includes annealing the silicon carbide wafer after the forming the carbon protection film.