The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Dec. 29, 2008
Roger Yu-kwan Leung, San Jose, CA (US);
Nicole Rutherford, Saratoga, CA (US);
Anil Bhanap, Milpitas, CA (US);
Roger Yu-Kwan Leung, San Jose, CA (US);
Nicole Rutherford, Saratoga, CA (US);
Anil Bhanap, Milpitas, CA (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.