The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Oct. 08, 2008
Goh Matsunobu, Kanagawa, JP;
Koichi Tatsuki, Kanagawa, JP;
Yoshio Inagaki, Kanagawa, JP;
Nobuhiko Umezu, Kanagawa, JP;
Koichi Tsukihara, Kanagawa, JP;
Goh Matsunobu, Kanagawa, JP;
Koichi Tatsuki, Kanagawa, JP;
Yoshio Inagaki, Kanagawa, JP;
Nobuhiko Umezu, Kanagawa, JP;
Koichi Tsukihara, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam and the substrate are moved relative to each other in a first direction and a second direction which is opposite to the first direction, a change in an optical characteristic between an area irradiated with the laser beam and an area which is not irradiated with the laser beam in the substrate or an optical characteristic of the irradiated area is measured in each of the first and second directions, and irradiation power of the laser beam is modulated so that the difference between a measurement result in the first direction and a measurement result in the second direction lies in a predetermined range.