The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Nov. 03, 2006
Todd C. Roggenbauer, Chandler, AZ (US);
Vishnu K. Khemka, Phoenix, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Amitava Bose, Tempe, AZ (US);
Paul Hui, Mesa, AZ (US);
Xiaoqiu Huang, Austin, TX (US);
Van Wong, Round Rock, TX (US);
Todd C. Roggenbauer, Chandler, AZ (US);
Vishnu K. Khemka, Phoenix, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Amitava Bose, Tempe, AZ (US);
Paul Hui, Mesa, AZ (US);
Xiaoqiu Huang, Austin, TX (US);
Van Wong, Round Rock, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A process of forming an electronic device can include providing a semiconductor-on-insulator substrate including a substrate, a first semiconductor layer, and a buried insulating layer lying between the first semiconductor layer and the substrate. The process can also include forming a field isolation region within the semiconductor layer, and forming an opening extending through the semiconductor layer and the buried insulating layer to expose the substrate. The process can further include forming a conductive structure within the opening, wherein the conductive structure abuts the substrate.