The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7820514 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 26, 2010

Filed:

May. 31, 2007
Applicants:

Min-kyung Ryu, Seoul, KR;

Han-mei Choi, Seoul, KR;

Seung-hwan Lee, Gyeonggi-do, KR;

Sun-jung Kim, Gyeonggi-do, KR;

Se-hoon OH, Gyeonggi-do, KR;

Inventors:

Min-kyung Ryu, Seoul, KR;

Han-mei Choi, Seoul, KR;

Seung-hwan Lee, Gyeonggi-do, KR;

Sun-jung Kim, Gyeonggi-do, KR;

Se-hoon Oh, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a flash memory device can include forming a tunneling oxide film on a semiconductor substrate, forming a charge storing layer on the tunneling oxide film, forming a first blocking oxide film on the charge storing layer at a first temperature, forming a second blocking oxide film on the first blocking oxide film at a second temperature higher than the first temperature, and forming a gate electrode on the second blocking oxide film.


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Ryu, Min-kyung. (2010). Methods of forming flash memory devices including blocking oxide films (U.S. Patent No. 7820514). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7820514

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