The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Jun. 27, 2008
IN NO Lee, Icheon-si, KR;
In No Lee, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
In a method for manufacturing a nonvolatile memory device, an etch mask layer formed on a dielectric layer to define contact holes in the dielectric layer is slope-etched to form an etch mask pattern having an opening wider at the upper end thereof than the lower end thereof. Thus, the contact holes are defined in the dielectric layer to have a finer size than the upper end of the opening of the etch mask pattern. The method for manufacturing a nonvolatile memory device includes forming an etch mask pattern on a dielectric layer such that a width of a lower end of each opening defined in the etch mask pattern is less than a width of an upper end thereof; and defining contact holes by removing portions of the dielectric layer using the etch mask pattern.