The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2010

Filed:

Jan. 19, 2007
Applicants:

Zhi Zheng, Beijing, CN;

Yuan Yao, Beijing, CN;

Liang Liu, Beijing, CN;

Shou-shan Fan, Beijing, CN;

Inventors:

Zhi Zheng, Beijing, CN;

Yuan Yao, Beijing, CN;

Liang Liu, Beijing, CN;

Shou-Shan Fan, Beijing, CN;

Assignees:

Tsinghua University, Beijing, CN;

Hon Hai Precision Industry Co., Ltd., Tu-Cheng, Taipei Hsien, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for synthesizing single-wall carbon nanotubes (SWNTs) generally includes the steps of: providing a substrate having an upper portion comprised of indium tin oxide; forming an aluminum layer on the upper portion of the substrate; forming a catalyst layer on the aluminum layer to obtain a treated substrate; annealing the treated substrate so as to transform the catalyst layer into a plurality of oxidized catalyst particles on the substrate; and growing a plurality of single-wall carbon nanotubes on the treated substrate using a chemical vapor deposition process.


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