The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2010

Filed:

Apr. 13, 2006
Applicants:

Hooman Hafezi, Redwood City, CA (US);

Aron Rosenfeld, Palo City, CA (US);

Michael X. Yang, Palo Alto, CA (US);

Inventors:

Hooman Hafezi, Redwood City, CA (US);

Aron Rosenfeld, Palo City, CA (US);

Michael X. Yang, Palo Alto, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 5/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

Generally, the process includes depositing a barrier layer on a feature formed in a dielectric layer, decorating the barrier layer with a metal, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier layer formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.


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