The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Feb. 17, 2006
Shuichi Inami, Ogi, JP;
Nobumitsu Takase, Saga, JP;
Yasuhiro Kogure, Saga, JP;
Ken Hamada, Saga, JP;
Tsuyoshi Nakamura, Saga, JP;
Shuichi Inami, Ogi, JP;
Nobumitsu Takase, Saga, JP;
Yasuhiro Kogure, Saga, JP;
Ken Hamada, Saga, JP;
Tsuyoshi Nakamura, Saga, JP;
Sumco Corporation, Tokyo, JP;
Abstract
In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12×10to 18×10atoms/cmon ASTM-F121 1979. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the single crystal. A temperature of the silicon single crystal is controlled during the growth of the crystal such that the ratio Gc/Ge of an axial thermal gradient Gc at the central portion of the crystal between its melting point and its temperature of 1350° C. to an axial thermal gradient Ge at the periphery of the crystal between its melting point and its temperature of 1350° C. is 1.1 to 1.4. The axial thermal gradient Gc at the central portion of the crystal is 3.0 to 3.5° C./mm.