The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Jun. 28, 2006
LI Qian, Beijing, CN;
Jie Tang, Beijing, CN;
Liang Liu, Beijing, CN;
Jing Qi, Beijing, CN;
Pi-jin Chen, Beijing, CN;
Zhao-fu HU, Beijing, CN;
Shou-shan Fan, Beijing, CN;
Li Qian, Beijing, CN;
Jie Tang, Beijing, CN;
Liang Liu, Beijing, CN;
Jing Qi, Beijing, CN;
Pi-Jin Chen, Beijing, CN;
Zhao-Fu Hu, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., Tu-Cheng, Taipei Hsien, TW;
Abstract
A sputter ion pump includes one vacuum chamber, two parallel anode poles and one cold cathode electron emitter. The vacuum chamber includes at least one aperture located in an outer wall thereof. The two parallel anode poles are positioned in the vacuum chamber and arranged in a symmetrical configuration about a center axis of the vacuum chamber. The cold cathode electron emission device is located on or proximate the outer wall of the vacuum chamber and faces a corresponding aperture. The cold cathode electron emission device is thus configured for injecting electrons through the corresponding aperture and into the vacuum chamber. The sputter ion pump produces a saddle-shaped electrostatic field and is free of a magnetic field. The sputter ion pump has a simplified structure and a low power consumption.