The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7817389 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 19, 2010

Filed:

Feb. 18, 2009
Applicants:

Alfredo Ochoa, Cave Creek, AZ (US);

George Templeton, Tempe, AZ (US);

James Washburn, Scottsdale, AZ (US);

Inventors:

Alfredo Ochoa, Cave Creek, AZ (US);

George Templeton, Tempe, AZ (US);

James Washburn, Scottsdale, AZ (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 3/20 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device for coupling a transient voltage at an input node to a reference node, the device having a bipolar transistor adapted to couple its collector to an input node and its emitter to the reference node and a driver device adapted to be coupled between the input node and the base terminal of the transistor such that the driver device is responsive to a transient voltage at the input node to turn on the transistor, thereby shunting the transient voltage to the reference node. Preferably, the input node is coupled to a high speed data transmission line that operates below 5 v and the reference node is coupled to ground and the transistor is an NPN transistor. The driver may preferably be a gate-drain connected MOS transistor with its gate-drain terminal coupled to the collector terminal of the transistor and its source terminal coupled to the base terminal of the transistor. Alternatively, the driver may be a light emitting diode (LED) or any other diode with a different material (band-gap) and die size than the LED, connected to the bipolar transistor to create a low voltage clamping device.


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