The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2010

Filed:

Oct. 10, 2008
Applicant:

Bumha Lee, Pleasanton, CA (US);

Inventor:

Bumha Lee, Pleasanton, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 27/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

An analog sampling network () includes a sampling capacitor being coupled between a bottom plate sampling switch and a top plate sampling switch implemented as NMOS transistors. The top plate sampling switch has source/drain terminals coupled respectively to the sampling capacitor and a first reference voltage. The analog sampling network includes a top plate boosting circuit () providing a boosted gate voltage to a gate terminal of the top plate sampling switch during a sampling phase, the boosted gate voltage being the sum of a first voltage and a second voltage. The first voltage is approximately equal to the first reference voltage and tracks process, temperature, power supply voltage and biasing condition variations. The second voltage is a maximum operating voltage from the gate to drain/source terminal for a fabrication process used to fabricate the second MOS transistor.


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