The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Oct. 25, 2006
Kazutoshi Nakajima, Hamamatsu, JP;
Minoru Niigaki, Hamamatsu, JP;
Tomoko Mochizuki, Hamamatsu, JP;
Toru Hirohata, Hamamatsu, JP;
Kazutoshi Nakajima, Hamamatsu, JP;
Minoru Niigaki, Hamamatsu, JP;
Tomoko Mochizuki, Hamamatsu, JP;
Toru Hirohata, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A semiconductor photocathodeincludes: a transparent substrate; a first electrode, formed on the transparent substrateand enabling passage of light that has been transmitted through the transparent substrate; a window layer, formed on the first electrodeand formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer, formed on the window layer, formed of a semiconductor material that is lattice matched to the window layer, is narrower in energy band gap than the window layer, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer, formed on the light absorbing layer, formed of a semiconductor material that is lattice matched to the light absorbing layer, and emitting the photoelectrons excited in the light absorbing layerto the exterior from a surface; and a second electrode, formed on the electron emission layer.