The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2010

Filed:

Feb. 16, 2007
Applicant:

Yoji Nomura, Mizuho, JP;

Inventor:

Yoji Nomura, Mizuho, JP;

Assignee:

Sanyo Electric Co., Ltd., Moriguchi-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 31/062 (2006.01);
U.S. Cl.
CPC ...
Abstract

The absorption of moisture from a wall surface of an apertured part formed in an interlayer insulating film in accordance with a light-receiving part of a light detector is minimized and deterioration of wiring in the interlayer insulating film is prevented. A position that corresponds to a light-receiving partof a wiring-structure layerobtained by layering an Al layer and an interlayer insulating film composed of SOG or another material is etched, and an apertured partis formed. A silicon nitride filmis then deposited on a side-wall surface and bottom surface of the apertured partvia CVD. The silicon nitride layerprevents moisture from infiltrating the wiring-structure layer


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Nomura, Yoji. (2010). Semiconductor device and method for manufacturing same (U.S. Patent No. 7816748). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7816748

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