The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Apr. 17, 2008
Masaaki Noda, Shiga, JP;
Tomonari Oota, Toyama, JP;
Masaaki Noda, Shiga, JP;
Tomonari Oota, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The semiconductor device of the present invention has a body layer of a P-type impurity region formed on an Nlayer of an N-type impurity region. A plurality of trenches is formed through the body layer from the main surface thereof. A gate insulating film and a gate electrode are formed in each trench. A contact layer of a P-type impurity region and an emitter layer of an N-type impurity region are formed on the main surface of the body layer. A plurality of floating ring layers of P-type impurity regions is formed on the main surface of the Nlayer, being spaced apart from the body layer. A well layer of an N-type impurity region is formed between the body layer and Nlayer in an area contained in the body layer in plane view.