The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Jul. 08, 2008
Hyuck-chai Jung, Gyeonggi-do, KR;
June-hee Lim, Seoul, KR;
Hyuck-Chai Jung, Gyeonggi-do, KR;
June-Hee Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A field-effect transistor including localized halo ion regions that can optimize HEIP characteristics and GIDL characteristics. The field-effect transistor includes a substrate, an active region, a gate structure, and halo ion regions. The active region includes source/drain regions and a channel region formed at a partial region in the substrate. The gate structure electrically contacts the active region. The halo ion regions are locally formed adjacent to both end portions of the source/drain regions in the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile