The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Mar. 24, 2008
Kyu-sik Kim, Yongin-si, KR;
Sang-cheol Park, Yongin-si, KR;
Young-jun Park, Yongin-si, KR;
O-hyun Kwon, Yongin-si, KR;
Jung-gyu Nam, Yongin-si, KR;
Hye-suk JO, Yongin-si, KR;
Kyu-sik Kim, Yongin-si, KR;
Sang-cheol Park, Yongin-si, KR;
Young-jun Park, Yongin-si, KR;
O-hyun Kwon, Yongin-si, KR;
Jung-gyu Nam, Yongin-si, KR;
Hye-suk Jo, Yongin-si, KR;
Abstract
Provided is a CMOS image sensor that uses thiophene derivatives. The CMOS image sensor includes first through third photoelectric conversion units vertically and sequentially stacked on a semiconductor substrate. The first photoelectric conversion unit detects blue light and comprises a first electrode, a second electrode, and a p-type thiophene derivative layer between the first electrode and the second electrode.