The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Nov. 20, 2007
Jong-hyun Choung, Suwon-si, KR;
Hong-sick Park, Suwon-si, KR;
Joo-ae Youn, Seongnam-si, KR;
Sun-young Hong, Yongin-si, KR;
Bong-kyun Kim, Incheon, KR;
Won-suk Shin, Yongin-si, KR;
Byeong-jin Lee, Yongin-si, KR;
Jong-Hyun Choung, Suwon-si, KR;
Hong-Sick Park, Suwon-si, KR;
Joo-Ae Youn, Seongnam-si, KR;
Sun-Young Hong, Yongin-si, KR;
Bong-Kyun Kim, Incheon, KR;
Won-Suk Shin, Yongin-si, KR;
Byeong-Jin Lee, Yongin-si, KR;
Abstract
A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer.