The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Jun. 13, 2008
Stephen W. Bedell, Wappingers Falls, NY (US);
Huajie Chen, Wappingers Falls, NY (US);
Anthony G. Domenicucci, New Paltz, NY (US);
Keith E. Fogel, Mohegan Lake, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Huajie Chen, Wappingers Falls, NY (US);
Anthony G. Domenicucci, New Paltz, NY (US);
Keith E. Fogel, Mohegan Lake, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A high-quality, substantially relaxed SiGe-on-insulator substrate material which may be used as a template for strained Si is described. The substantially relaxed SiGe-on-insulator substrate includes a Si-containing substrate, an insulating region that is resistant to Ge diffusion present atop the Si-containing substrate, and a substantially relaxed SiGe layer present atop the insulating region. The insulating region includes an upper region that is comprised of a thermal oxide and the substantially relaxed SiGe layer has a thickness of about 2000 nm or less.