The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Apr. 24, 2009
Jong IN Yang, Gyunggi-do, KR;
Yu Seung Kim, Gyunggi-do, KR;
Sang Yeob Song, Gyunggi-do, KR;
SI Hyuk Lee, Gyunggi-do, KR;
Tae Hyung Kim, Gyunggi-do, KR;
Jong In Yang, Gyunggi-do, KR;
Yu Seung Kim, Gyunggi-do, KR;
Sang Yeob Song, Gyunggi-do, KR;
Si Hyuk Lee, Gyunggi-do, KR;
Tae Hyung Kim, Gyunggi-do, KR;
Samsung LED Co., Ltd., Gyunggi-Do, KR;
Abstract
There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.