The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Jun. 01, 2005
Applicants:
Sunil Wickramanayaka, Tokyo, JP;
Naoki Yamada, Tokyo, JP;
Inventors:
Sunil Wickramanayaka, Tokyo, JP;
Naoki Yamada, Tokyo, JP;
Assignee:
Canon Anelva Corporation, Kawasaki-shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of depositing a high permittivity dielectric film on a doped silicon or silicon compound layer of a wafer. The method includes a first step of nitriding a specific element (A) such as hafnium Hf to form a nitride film (AN) on the silicon layer, wherein the specific element (A) and nitrogen (N) in the nitride film (AN) have a predetermined fraction relationship between x and y; a second step of oxidizing the nitride film in a oxygen atmosphere to form the dielectric film (AON).