The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Jul. 14, 2007
Kyoung Woo Lee, Suwon-si, KR;
Ja Hum Ku, Seongnam-si, KR;
Wanjae Park, Hwaseong-si, KR;
Chong Kwang Chang, Yongin-si, KR;
Theodorus E. Standaert, Pine Bush, NY (US);
Kyoung Woo Lee, Suwon-si, KR;
Ja Hum Ku, Seongnam-si, KR;
WanJae Park, Hwaseong-si, KR;
Chong Kwang Chang, Yongin-si, KR;
Theodorus E. Standaert, Pine Bush, NY (US);
Samsung Electronics Co., Ltd., Suwon-Si, KR;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Semiconductor fabrication methods to forma of via contacts in DSL (dual stress liner) semiconductor devices are provided, in which improved etching process flows are implemented to enable etching of via contact openings through overlapped and non-overlapped regions of the dual stress liner structure to expose underlying salicided contacts and other device contacts, while mitigating or eliminating defect mechanisms such as over etching of contact regions underlying non-overlapped regions of the DSL.