The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Jul. 18, 2006
Katsura Hirai, Hachioji, JP;
Katsura Hirai, Hachioji, JP;
Konica Minolta Holdings, Inc., Tokyo, JP;
Abstract
Disclosed is a method for manufacturing a thin film transistor having high resolution and high pattern accuracy with high production efficiency. Particularly disclosed is a method for manufacturing a thin film transistor wherein there is prevented deterioration of semiconductor properties in a plating step for electrode formation. This method is characterized in that a source electrode or a drain electrode is formed by such a process wherein a protective film is formed on an organic semiconductor layer, then a plating catalyst pattern is formed thereon by supplying a liquid containing a plating catalyst, and then a plating agent is brought into contact with the pattern.