The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Jan. 30, 2006
Matthias Bauer, Phoenix, AZ (US);
Chantal Arena, Mesa, AZ (US);
Ronald Bertram, Gilbert, AZ (US);
Pierre Tomasini, Tempe, AZ (US);
Nyles Cody, Tempe, AZ (US);
Paul Brabant, Phoenix, AZ (US);
Joseph Italiano, Phoenix, AZ (US);
Paul Jacobson, Phoenix, AZ (US);
Keith Doran Weeks, Gilbert, AZ (US);
Matthias Bauer, Phoenix, AZ (US);
Chantal Arena, Mesa, AZ (US);
Ronald Bertram, Gilbert, AZ (US);
Pierre Tomasini, Tempe, AZ (US);
Nyles Cody, Tempe, AZ (US);
Paul Brabant, Phoenix, AZ (US);
Joseph Italiano, Phoenix, AZ (US);
Paul Jacobson, Phoenix, AZ (US);
Keith Doran Weeks, Gilbert, AZ (US);
ASM America Inc., Phoenix, AZ (US);
Abstract
Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.