The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7816213 B1

Expired

Date of Patent:

Oct. 19, 2010

Filed:

Feb. 11, 2008

Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof

Applicant:

Takeo Matsuki, Kanagawa, JP;

Inventor:

Takeo Matsuki, Kanagawa, JP;

Assignee:

NEC Electronics Corporation, Kawasaki, Kanagawa, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Laura M Menz

Int. Cl.

CPC ...

H01L 21/00 (2006.01);

U.S. Cl.

CPC ...

Abstract

A semiconductor device with integrated MIS field-effect transistors includes a first transistor containing a first gate electrode having a composition represented by MAx and a second transistor containing a second gate electrode having a composition represented by MAy, wherein M is at least one metal element selected from the group consisting of W, Mo, Ni, Pt, Ta, Pd, Co and Ti; A is silicon and/or germanium; 0<x≦3 and 0<y≦3, and x and y are different from each other.

Find Patent Forward Citations

Matsuki, Takeo. (2010). Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof (U.S. Patent No. 7816213). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7816213

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