The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Sep. 12, 2008
Yutaka Hayashi, Tsukuba-shi, Ibaraki 305-0045, JP;
Hisashi Hasegawa, Chiba, JP;
Yoshifumi Yoshida, Chiba, JP;
Jun Osanai, Chiba, JP;
Yutaka Hayashi, Tsukuba-shi, Ibaraki 305-0045, JP;
Hisashi Hasegawa, Chiba, JP;
Yoshifumi Yoshida, Chiba, JP;
Jun Osanai, Chiba, JP;
Seiko Instruments Inc., , JP;
Other;
Abstract
A high voltage operating field effect transistor has a substrate and a semiconductor channel formation region disposed in a surface of the substrate. A source region and a drain region are spaced apart from each other with the semiconductor channel formation region disposed between the source region and the drain region. A gate insulating film region is disposed on the semiconductor channel formation region. A resistive gate region is disposed on the gate insulating film region. A source side electrode is disposed on a source region side of the resistive gate region and is operative to receive a signal electric potential. A drain side electrode is disposed on a drain region side of the resistive gate region and is operative to receive a bias electric potential an absolute value of which is equal to or larger than that of a specified electric potential and which changes according to an increase or decrease in a drain electric potential.