The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
May. 08, 2009
Jonghae Kim, Fishkill, NY (US);
Moon J. Kim, Wappingers Falls, NY (US);
Jean-oliver Plouchart, New York, NY (US);
Robert E. Trzcinski, Rhinebeck, NY (US);
Jonghae Kim, Fishkill, NY (US);
Moon J. Kim, Wappingers Falls, NY (US);
Jean-Oliver Plouchart, New York, NY (US);
Robert E. Trzcinski, Rhinebeck, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
One or more on-chip VNCAP or MIMCAP capacitors utilize a variable MOS capacitor to improve the uniform capacitance value of the capacitors. This permits the production of silicon semiconductor chips on which are mounted capacitors having capacitive values that are precisely adjusted to be within a range of between about 1% and 5% of their design value. This optimization can be achieved by the use of a back-to-back connection between a pair of the variable MOS capacitors for DC decoupling. It involves the parallelization of on-chip BEOL capacitance of VNCAP and/or MIMCAP capacitors by the insertion in the FEOL of pairs of back-to-back variable MOS capacitors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile