The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2010

Filed:

Jan. 09, 2009
Applicants:

Timothy J. Brosnihan, Natick, MA (US);

Robert E. Sulouff, Jr., Chesapeake, VA (US);

John M. Sledziewski, Hanover, MA (US);

Inventors:

Timothy J. Brosnihan, Natick, MA (US);

Robert E. Sulouff, Jr., Chesapeake, VA (US);

John M. Sledziewski, Hanover, MA (US);

Assignee:

Analog Devices, Inc., Norwood, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a MEMS device provides a wafer having a base with a conductive portion. The wafer also has an intermediate conductive layer. After it provides the wafer, the method adds a diaphragm layer to the wafer. The method removes at least a portion of the intermediate conductive layer to form a cavity between the diaphragm layer and the base. At least a portion of the diaphragm layer is movable relative to the base. After it forms the cavity, the method seals the cavity.


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