The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Nov. 04, 2004
Kazuyoshi Honda, Takatsuki, JP;
Kiichiro Oishi, Kyoto, JP;
Yasuhiko Bito, Minamikawachi-gun, JP;
Takayuki Nakamoto, Sakai, JP;
Kazuyoshi Honda, Takatsuki, JP;
Kiichiro Oishi, Kyoto, JP;
Yasuhiko Bito, Minamikawachi-gun, JP;
Takayuki Nakamoto, Sakai, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A negative active material thin film provided on a collector layer directly or via an underlying layer has a multi-layered configuration including at least two silicon thin films containing silicon as a main component. Because of this, even when the thickness of the negative active material thin film is increased, the increase in thickness of one silicon thin film can be prevented by increasing the number of silicon thin films. Thus, the diameter of silicon particles substantially in an inverse truncated cone shape is not enlarged in the silicon thin film. Accordingly, in an energy device having a thin film mainly containing silicon as a negative active material, even when the thickness of the negative active material layer is increased to obtain a larger capacity, cycle characteristics are not degraded.