The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2010

Filed:

Apr. 09, 2008
Applicants:

Yuji Matsuyama, Tokushima, JP;

Shinji Suzuki, Naka-gun, JP;

Kousuke Ise, Naka-gun, JP;

Atsuo Michiue, Anan, JP;

Akinori Yoneda, Anan, JP;

Inventors:

Yuji Matsuyama, Tokushima, JP;

Shinji Suzuki, Naka-gun, JP;

Kousuke Ise, Naka-gun, JP;

Atsuo Michiue, Anan, JP;

Akinori Yoneda, Anan, JP;

Assignee:

Nichia Corporation, Anan-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nitride semiconductor laser device includes, on a first principle face of the (0001) of a nitride semiconductor substrate, a nitride semiconductor layer having a first conductivity type, an active layer, and a nitride semiconductor layer having a second conductivity type that is different from the first conductivity type, and being formed a stripe ridge on the surface thereof. The (000-1) face and an inclined face other than the (000-1) face are exposed on a second principal face of the nitride semiconductor substrate. The inclined face other than the (000-1) face represents no less than 0.5% over the surface area of the second principal face.


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