The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Apr. 08, 2009
Milton Feng, Champaign, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
Gabriel Walter, Champaign, IL (US);
Han Wui Then, Urbana, IL (US);
Milton Feng, Champaign, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
Gabriel Walter, Champaign, IL (US);
Han Wui Then, Urbana, IL (US);
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Abstract
A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.